专利摘要:
A sensor for the measurement of pressure and / or force comprises at least one measuring arrangement with at least one stressed on compression piezoelectric measuring element (2) for the dynamic pressure or force measurement, and a membrane (3) for initiating the pressure or the force at least the piezoelectric measuring element. In order to provide a further embodiment of a sensor for pressure or force measurement, which enables an improved detection of static and dynamic effects, a further measuring arrangement (4, 7) based on a different physical measuring principle is used for this sensor for a static pressure or pressure measurement Force measurement proposed.
公开号:AT511330A4
申请号:T828/2011
申请日:2011-06-03
公开日:2012-11-15
发明作者:Alexander Dr Schricker;Andreas Mayer;Dietmar Dr Kroeger
申请人:Piezocryst Advanced Sensorics;
IPC主号:
专利说明:

From: Pinter, Laminger & White OG. · ΊΤοΊΤ) β * 42ΐδ35 «#
03/06/2011 11:51 # 071 P.006 / 012
1 PC-3418 AT
Sensor for measuring pressure and / or force
The invention relates to a sensor for measuring pressure and / or force, comprising at least one measuring arrangement with at least one stressed on compression piezoelectric Meßiement for the dynamic pressure or force measurement, and a membrane for introducing the pressure or the force on at least the piezoelectric measuring element.
Piezoelectric pressure sensors make use of the effect that the surfaces of piezoelectric materials are electrically charged proportionally under mechanical stress, so that subsequently a processable charge signal can be generated. Such sensors are active sensors which are ideally suited for dynamic measurement technology. In addition, piezoresistive pressure sensors are known which change their electrical resistance under mechanical stress.
US 2006137456 A describes a sensor which has a gallium nitrite membrane which rests on a substrate which has been etched to form a cavity. This membrane shows both a capacitive response and a piezo effect on external stimuli. The sensor further includes a measurement circuit for at least one of these responses and may be used to measure external stimuli such as pressure, force or mechanical vibration.
In order to enable both a dynamic and a static pressure measurement with only one sensor, it has been proposed in JP 2004226294 A to form electrodes on a substrate with piezoelectric material on two surfaces. A membrane with insulating material and a third electrode on one side and a dummy electrode on the other side is provided, wherein the substrate is bonded to the membrane such that the second and the third electrode face each other. Thus, the static pressure can be determined from the capacitance between the second and third electrodes, and the dynamic pressure can be determined from the piezoelectric effect of the substrate.
The object of the present invention was now a further embodiment of a sensor for the pressure or force measurement as a'ngangs specified, which allows an improved detection of static and dynamic effects.
To achieve this object, the sensor according to the invention is characterized in that a further, based on a different physical measuring principle measuring arrangement is provided for a static pressure or force measurement. Thus, in addition to the parallel, in-phase measurement of dynamic and static pressures or forces, a self-test function of the sensor is possible on the one hand with high accuracy and safety, if the Dy 03/06/2011 11:52
No .: R967 P.006 / 012
FromiPinter, Laminger & White OG .. T (* d534 £ 452fc k · · · 03/06/2011 11:52 # 071 P.007 / 012
2 PC-3418 AT namik falls within the scope of the measuring principle for static measurements. The combination of static and dynamic measurement results in an in-phase signal of higher bandwidth.
A first embodiment variant of such a sensor is characterized in that at least one region of the sensor influenced by the pressure and / or the force is provided with a strain gauge structure for the static pressure or force measurement.
In this case, the strain gauge can be applied to a surface of at least one acted upon by the pressure or the force measuring element, wherein the measuring element is preferably operated in the transverse mode.
As a further variant of the invention for connecting a dynamic with a static pressure or force measurement, the sensor described above may also be characterized in that at least one piezoelectric element for the static pressure or force measurement operated as a piezoelectric resonator stressed on compression by the membrane is.
According to a further embodiment, if a strain gauge structure is provided in an orientation different from the direction of compression, preferably normal to this direction, the temperature-induced dimensional change can be determined from the ratio of the signals of all the strain gauge structures and thus a temperature compensation sensed.
However, a temperature compensation can also be carried out according to another embodiment of the sensor, if at least one further strain-measuring structure is provided in an area of the sensor which is uninfluenced by the pressure and / or the force.
In the following description, the invention will be explained in more detail by advantageous embodiments and with reference to the accompanying drawings.
1 shows a sensor according to the invention in a variant with static pressure measurement by strain gauges, wherein in the left side of the figure, a cross section at the level of the line BB of the right side can be seen, and wherein the right side of the figure is a longitudinal section along the 2 is a sensor according to the invention in another embodiment with static pressure measurement by means of piezoelectric resonator, again in the left side of the figure, a cross section at the level of the line BB to the right side can be seen, and wherein the right side of the figure is a longitudinal section along the plane BB of the left side.
The sensor shown in FIG. 1 has, in a sensor housing 1, two piezoelectric measuring elements 2 which are preferably operated in transverse mode in order to dyna- 03/06/2011 11:53
No .: R967 P.007 / 012
From: Pinter, Larainger & White OG .. T 0.:053424536
03/06/2011 11:53 # 071 P.008 / 012
3 PC-3418 AT mixed pressure to measure. The piezoelectric measuring elements 2 are held upright in the sensor housing 1 and are biased. Force is applied to the end faces of the measuring elements 2 via the membrane 3, these being compressed in proportion to the applied force. This compression is used to generate the different measurement signals. For a static pressure measurement according to another physical principle, a strain gauge 4 is provided, which is applied to one or more additional elements 5. For example, as shown in FIG. 1, a dielectric and then a strain-measuring structure 4 are applied on the electrode surface of one or more of the piezoelectric measuring elements 5 by means of thin-film technology. Since thus the signal for the dynamic measurement and the signal for the static measurement are generated via the same membrane 3, an in-phase measurement of both signals is possible.
Optionally, piezocrystals 5 are not used for the piezoelectric measuring function but only as a support for the strain gauge structure 4, which in this case is applied directly to the nonconductive crystal surface. These crystals 5 need not necessarily have the same cutting angle as those with piezoelectric measuring function. In principle, strain gauges 4 could also be provided on the sensor housing 1 or any other areas as long as they are affected by the pressure or force to be measured, i. E. deformed, be.
Possible embodiments of the contacting, for example, come into question that the strain gauges 4 are contacted with bonding technology, or that the contact is made via pads 6 on the bearing surfaces, in which case the traces on the elements felt to the face and accordingly via traces on the Support surfaces are brought to connecting wires. In order to minimize the influence of the contact resistance of this contact, the contacts can be made double (4-wire connection). □ ne static pressure measurement can also, as with the sensor of the fig. 2 is exemplified, be accomplished via one or more measuring elements 7, which are operated as a piezoelectric resonator (Dickenscherschwinger). The compression caused by force on the measuring elements 7 causes a shift of the resonance frequency, which is directly proportional to the applied pressure. The excitation of the measuring elements 7 via electrodes on the side surfaces of the measuring elements. These electrodes can be contacted by means of bonding or, as in the case of the transversal piezo-measuring elements 2, over the end faces. The support surface must have their own mutually electrically isolated areas, as shown schematically by the dotted line. 03/06/2011 11:53
N °: R967 P. 008/012 03/06/2011 11:53 # 071 P.009 / 012
From; Pinter, Laninger & White OG. ··. · *. ". ·. • «« «· · · · ·« * «« ················································································· * * * *
4 PC-3418 AT
In any case, all the variants presented above in the overlapping area of static and dynamic measurement offer, in addition to the advantage of the previously described in-phase measurement of dynamic and static pressures or forces, further advantageous possibilities by suitable signal processing. For example, the difference between the two signals can be formed for the self-test function of the sensor. For a higher accuracy of the measured value in the overlapping region, an optionally weighted mean value of the signals could be formed, for example. 03/06/2011 11:54 r .: R967 P.009 / 012
权利要求:
Claims (6)
[1]
Froi »: Pinter, Laminger & White 06, · · · · · · · 05 ^ 5δ5. * ii · * * · · * · ♦ · · t »i · # ·« ·· «· * ·» 4 * «· ♦ 03/06/2011 11:54 # 071 P.010 / 012 5 PC-3418 1. A sensor for measuring pressure and / or force, comprising at least one measuring arrangement with at least one stressed on compression piezoelectric measuring element (2) for the dynamic pressure or force measurement, and a membrane (3) for initiating the pressure or, the force on at least the piezoelectric measuring element (2), characterized by a watere, based on a different physical measuring principle measuring arrangement (4, 7) for a static pressure or force measurement.
[2]
2. Sensor according to claim 1, characterized in that at least one influenced by the pressure and / or the force region of the sensor is provided with a Dehnmessstruktur (4) for the static pressure or force measurement.
[3]
3. Sensor according to claim 2, characterized in that the strain gauge (4) on a surface of at least one acted upon by the pressure or the force! Measuring element (2) is applied, wherein the measuring element (2) is preferably operated in the transverse mode.
[4]
4. Sensor according to one of claims 1 to 3, characterized in that at least one piezoelectric element (7) for the static pressure or force measurement is operated as a piezoelectric resonator stressed on compression by the membrane
[5]
5. Sensor according to one of claims 1 to 4, characterized in that a Dehnmessstruktur (4) in a deviating from the direction of compression orientation, preferably normal to this direction, is applied.
[6]
6. Sensor according to one of claims 1 to 4, characterized in that at least one further Dehnmessstruktur (4) is provided in an area of the sensor uninfluenced by the pressure and / or the force 03/06/2011 11:54 No .: R967 P , 010/012
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引用文献:
公开号 | 申请日 | 公开日 | 申请人 | 专利标题
US3624714A|1970-04-23|1971-11-30|Dynasciences Corp|Piezoresistive miniature pressure transducer|
DE3125640A1|1981-06-30|1983-01-13|Robert Bosch Gmbh, 7000 Stuttgart|SENSOR|
DE4217766C1|1992-05-29|1993-07-08|Deutsche Aerospace Ag, 8000 Muenchen, De|Piezoelectric force and torque measurement transducer - contains two or more piezoelectric elements in modulator contg. plate acting on piezoelectric elements, summing amplifier for output voltages|
DE19628551A1|1995-08-04|1997-02-20|Ifm Electronic Gmbh|Pressure measuring unit for static and dynamic pressure|
DE19533756A1|1995-09-12|1997-03-13|Fraunhofer Ges Forschung|Electronic component for static and dynamic pressure detection|
DE19640854A1|1996-10-02|1998-04-09|Klaus Prof Dr Ing Horn|Force sensor with integrated hydraulic force/pressure conversion|
JP2002296131A|2001-03-29|2002-10-09|Matsushita Electric Ind Co Ltd|Static and dynamic pressure detecting sensor|
JP2003106919A|2001-09-28|2003-04-09|Matsushita Electric Ind Co Ltd|Static pressure and dynamic pressure detection sensor|
DE10221219A1|2002-05-13|2003-12-04|Ifm Electronic Gmbh|Pressure sensor for static and/or dynamic pressure measurements on media comprises a membrane which on the side facing away from the medium is provided with at least one support element|
US7451653B1|2005-11-22|2008-11-18|Sippola Clayton B|Pressure sensor|
WO2008106813A1|2007-03-02|2008-09-12|Eth Zurich|Sensor made of organic materials for the measurement of mechanical variables and the subsequent evaluation thereof|
WO2011057270A1|2009-11-09|2011-05-12|Kulite Semiconductor Products, Inc.|An enhanced static-dynamic pressure transducer suitable for use in gas turbines and other compressor applications|
AT353506B|1976-10-19|1979-11-26|List Hans|PIEZOELECTRIC RESONATOR|
AT369900B|1981-05-20|1983-02-10|List Hans|MEASURING VALUE WITH PIEZOELECTRIC SENSOR ELEMENT|
AT393416B|1989-04-27|1991-10-25|Avl Verbrennungskraft Messtech|MEASURING METHOD FOR DETERMINATION OR MONITORING OF MECHANICAL AND / OR PHYSICAL SIZES|
US4995014A|1990-01-29|1991-02-19|Sparton Corporation|Low frequency hydrophone and depth sensor assembly|
CN2093392U|1991-05-20|1992-01-15|华东工学院|High-frequency response piezo-electric film type pressure transducer|
WO1999013300A1|1997-09-08|1999-03-18|Ngk Insulators, Ltd.|Mass sensor and mass detection method|
JP2003185516A|2001-12-13|2003-07-03|Toyota Central Res & Dev Lab Inc|Pressure sensor|
CN1172169C|2002-08-29|2004-10-20|段祥照|Silicon saphire force-sensitive sensor and its making process|
JP2004132882A|2002-10-11|2004-04-30|Matsushita Electric Ind Co Ltd|Static and kinetic pressure detecting sensor|
JP2004226295A|2003-01-24|2004-08-12|Matsushita Electric Ind Co Ltd|Static and dynamic pressure detection sensor|
JP2004226294A|2003-01-24|2004-08-12|Matsushita Electric Ind Co Ltd|Static and dynamic pressure detection sensor|
JP2005069959A|2003-08-27|2005-03-17|Matsushita Electric Ind Co Ltd|Static pressure and kinetic pressure sensor|
DE102004020990B4|2004-04-23|2008-05-21|Schott Ag|Apparatus and method for producing microstructures|
US7181972B2|2004-12-27|2007-02-27|General Electric Company|Static and dynamic pressure sensor|
AT465396T|2006-05-04|2010-05-15|Kistler Holding Ag|PIEZOELECTRIC MEASURING ELEMENT WITH TRANSVERSAL EFFECT AND SENSOR COMPRISING SUCH A MEASURING ELEMENT|
AT503816B1|2006-06-06|2008-01-15|Piezocryst Advanced Sensorics|PIEZOELECTRIC SENSOR|
AT503558B1|2006-06-13|2007-11-15|Piezocryst Advanced Sensorics|DEVICE FOR MEASURING PRESSURE, FORCE, ACCELERATION OR SIZES DERIVED THEREFROM|
CN100480653C|2007-11-01|2009-04-22|大连理工大学|Large value piezoelectric quartz multi-component force sensor|
CN101493367A|2008-01-21|2009-07-29|昆山双桥传感器测控技术有限公司|Miniature dynamical stress sensor based on MEMS technology and method of producing same|
AT506705B1|2008-09-11|2009-11-15|Piezocryst Advanced Sensorics|PIEZOELECTRIC PRESSURE SENSOR|
CH704255A1|2010-12-22|2012-06-29|Kistler Holding Ag|FUEL SENSOR SYSTEM AND METHOD FOR PLANNING MEASUREMENTS OF FILM OR PANEL STRIPS FOR ROLLING.|FR2983955B1|2011-12-09|2014-10-03|Openfield|PRESSURE SENSOR FOR FLUID|
CH709395A1|2014-03-21|2015-09-30|Kistler Holding Ag|Piezoelectric measuring element for measuring the dynamic pressure as well as the static pressure and / or the temperature.|
CN104006904B|2014-05-15|2016-11-23|中国科学技术大学|A kind of self-checking formula dynamic compression-shear stress meter|
CN105651425A|2014-12-08|2016-06-08|航天长征火箭技术有限公司|Three-dimensional pressure sensor detecting granary reserves|
EP3329235A4|2015-07-31|2019-03-27|Sikorsky Aircraft Corporation|Multifunctional piezoelectric load sensor assembly|
CN110036268B|2016-11-30|2021-09-28|基斯特勒控股公司|Measuring sensor for measuring forces|
EP3330687A1|2016-11-30|2018-06-06|Kistler Holding AG|Measurement element for simultaneously measuring a force which can be both dynamic as well as static|
US10996120B1|2019-11-06|2021-05-04|Vibration Measurement Solutions, Inc.|Pressure sensor|
法律状态:
2018-02-15| MM01| Lapse because of not paying annual fees|Effective date: 20170603 |
优先权:
申请号 | 申请日 | 专利标题
ATA828/2011A|AT511330B1|2011-06-03|2011-06-03|SENSOR FOR MEASUREMENT OF PRESSURE AND / OR FORCE|ATA828/2011A| AT511330B1|2011-06-03|2011-06-03|SENSOR FOR MEASUREMENT OF PRESSURE AND / OR FORCE|
US14/123,585| US9291512B2|2011-06-03|2012-05-31|Sensor for measuring pressure and/or force|
PCT/EP2012/060242| WO2012164016A2|2011-06-03|2012-05-31|Sensor for measuring pressure and/or force|
EP12723876.4A| EP2715300B1|2011-06-03|2012-05-31|Sensor for measuring pressure and/or force|
CN201280027155.3A| CN103748446B|2011-06-03|2012-05-31|For measuring the sensor of pressure and/or acting force|
JP2014513191A| JP5913577B2|2011-06-03|2012-05-31|Sensor for measuring pressure and / or force|
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